Stack-type image sensor

ABSTRACT

Example embodiments are directed to a stack-type image sensor including resistance change elements. The stack-type image sensor includes at least two light-sensing layers that detect different color light stacked on different layers. The stack-type image sensor may not require a size of a unit pixel that detects a light color to be less than 1 μm in order to generate a high resolution color image. As such, resolution saturation may be avoided.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims the benefit under 35 U.S.C. §119 of KoreanPatent Application No. 10-2010-0016668, filed on Feb. 24, 2010, in theKorean Intellectual Property Office, the disclosure of which isincorporated herein in its entirety by reference.

BACKGROUND

1. Field

Example embodiments relate to stack-type image sensors, and moreparticularly, to stack-type image sensors using a resistance changeelement.

2. Description of the Related Art

Image sensors are used in various fields. For example, high densityimage sensors may be used in a high definition camera, and image sensorssensitive to ultraviolet/infrared rays may be used in a touch panel.Most commercially available image sensors include a charge-coupleddevice (CCD) image sensor or a complementary metal oxide semiconductor(CMOS) image sensor. Each of the CCD image sensor and the CMOS imagesensor uses a PN junction of a semiconductor material such as silicon.

Recently, research is being conducted in a micro process for highlyintegrate image sensors. If the size of a chip is reduced by using amicro process, while maintaining the same number of pixels of the imagesensors, then more image sensors may be produced from one wafer.Accordingly, the unit cost of the image sensors may be reduced,production of the image sensors may be increased, the size of, forexample, a camera module including the image sensors may be reduced, anda camera phone including the camera module may be relatively small andthin.

However, although the number of pixels is increased and the size of eachof the pixels is reduced, if the size of a unit cell for detecting eachcolor is less than 1 μm, that is, below the wavelength range of visiblelight, resolution is no longer increased due to an optical limitationcaused by light diffraction. That is, resolution is not improved,although the size of each of the pixels is reduced to achieve a highdegree of integration. This is referred to as resolution saturation.Accordingly, there is a demand for a method of increasing the number ofpixels, without reducing the size of a unit cell to less than 1 μm, inorder to improve resolution. Also, once the size of a unit cell isreduced, the area of a region for detecting light in a pixel, referredto as an aperture ratio, is also reduced, thereby lowering light useefficiency.

SUMMARY

According to example embodiments, an image sensor includes: at least twolight-sensing layers stacked on different layers. Each of the at leasttwo light-sensing layers includes at least one resistance changeelement. An electrical resistance of the at least one resistance changeelement may change according an amount of incident light.

According to example embodiments, the resistance change element may becarbon nanotubes on which spironaphthoxazine (SPO) is adsorbed.

According to example embodiments, the image sensor may further include asubstrate; and a first light-sensing layer, a first filter layer, asecond light-sensing layer, a second filter layer, and a thirdlight-sensing layer sequentially stacked on the substrate.

According to example embodiments, the image sensor may further includeat least one transparent insulating layer between the firstlight-sensing layer and the second light-sensing layer and between thesecond light-sensing layer and the third light-sensing layer.

According to example embodiments, the first filter layer may block lighthaving a blue wavelength and transmit light having wavelengths otherthan the blue wavelength, and the second filter layer may block lighthaving a green wavelength and transmit light having wavelengths otherthan the green wavelength or transmit light having a red wavelength andblock light having wavelengths other than the red wavelength.

According to example embodiments, each of the first and second filterlayers includes a light absorption adjusting layer including a lightabsorption material having an absorption coefficient that changesaccording to a wavelength of light incident on the light absorptionadjusting layer and a thickness of the light absorption adjusting layer.

According to example embodiments, the light absorption adjusting layerof the first filter layer may be thinner than the light absorptionadjusting layer of the second filter layer.

According to example embodiments, the first filter layer may be a bluecomplementary color filter that blocks light having a blue wavelengthand transmits light having other wavelengths, and the second filterlayer may be a green color complementary color filter that blocks lighthaving a green wavelength and transmits light having other wavelengthsor a red color filter that transmits light having a red wavelength.

According to example embodiments, each of the first through thirdlight-sensing layers may include: the resistance change element and acapacitor connected to each other in parallel; a reset transistor havinga source connected to one end of the resistance change element and thecapacitor; a source follower transistor having a gate connected to theone end of the resistance change element and the capacitor and a drainconnected to a drain of the reset transistor; a select transistor havinga drain connected to a source of the source follower transistor; and anoutput line connected to a source of the select transistor.

According to example embodiments, each of the first through thirdlight-sensing layers may further include a set transistor between theone end of the resistance change element and the capacitor, and thesource of the reset transistor and the gate of the source followertransistor.

According to example embodiments, the image sensor is at least a portionof a pixel of a plurality of pixels, the plurality of pixels arranged ina two-dimensional array.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other features and advantages will become more apparent bydescribing in detail example embodiments with reference to the attacheddrawings. The accompanying drawings are intended to depict exampleembodiments and should not be interpreted to limit the intended scope ofthe claims. The accompanying drawings are not to be considered as drawnto scale unless explicitly noted.

FIG. 1 is a cross-sectional view of a stack-type image sensor accordingto example embodiments;

FIG. 2 is a cross-sectional view of a stack-type image sensor accordingto example embodiments;

FIG. 3 is a circuit diagram illustrating a light-sensing layer in thestack-type image sensor of FIG. 1 or 2, according to exampleembodiments;

FIG. 4 is a circuit diagram illustrating a light-sensing layer in thestack-type image sensor of FIG. 1 or 2, according to exampleembodiments; and

FIG. 5 illustrates pixels in the stack-type image sensor of FIG. 1 or 2,according to example embodiments.

DETAILED DESCRIPTION

Detailed example embodiments are disclosed herein. However, specificstructural and functional details disclosed herein are merelyrepresentative for purposes of describing example embodiments. Exampleembodiments may, however, be embodied in many alternate forms and shouldnot be construed as limited to only the embodiments set forth herein.

Accordingly, while example embodiments are capable of variousmodifications and alternative forms, embodiments thereof are shown byway of example in the drawings and will herein be described in detail.It should be understood, however, that there is no intent to limitexample embodiments to the particular forms disclosed, but to thecontrary, example embodiments are to cover all modifications,equivalents, and alternatives falling within the scope of exampleembodiments. Like numbers refer to like elements throughout thedescription of the figures.

It will be understood that, although the terms first, second, etc. maybe used herein to describe various elements, these elements should notbe limited by these terms. These terms are only used to distinguish oneelement from another. For example, a first element could be termed asecond element, and, similarly, a second element could be termed a firstelement, without departing from the scope of example embodiments. Asused herein, the term “and/or” includes any and all combinations of oneor more of the associated listed items.

It will be understood that when an element is referred to as being“connected” or “coupled” to another element, it may be directlyconnected or coupled to the other element or intervening elements may bepresent. In contrast, when an element is referred to as being “directlyconnected” or “directly coupled” to another element, there are nointervening elements present. Other words used to describe therelationship between elements should be interpreted in a like fashion(e.g., “between” versus “directly between”, “adjacent” versus “directlyadjacent”, etc.).

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of exampleembodiments. As used herein, the singular forms “a”, “an” and “the” areintended to include the plural forms as well, unless the context clearlyindicates otherwise. It will be further understood that the terms“comprises”, “comprising,”, “includes” and/or “including”, when usedherein, specify the presence of stated features, integers, steps,operations, elements, and/or components, but do not preclude thepresence or addition of one or more other features, integers, steps,operations, elements, components, and/or groups thereof.

It should also be noted that in some alternative implementations, thefunctions/acts noted may occur out of the order noted in the figures.For example, two figures shown in succession may in fact be executedsubstantially concurrently or may sometimes be executed in the reverseorder, depending upon the functionality/acts involved.

FIG. 1 is a cross-sectional view of a stack-type image sensor 100 usinga resistance change element, according to example embodiments. Referringto FIG. 1, the image sensor 100 may include a plurality of, for example,first through third light-sensing layers 110, 120, and 130, stacked ondifferent layers over a substrate 101 in one pixel. Although the firstthrough third light-sensing layers 110, 120, and 130 are illustrated inFIG. 1, the number of light-sensing layers is not limited thereto andtwo or four or more light-sensing layers may be stacked according to acolor detection method.

The image sensor 100 may include the first light-sensing layer 110, afirst transparent insulating layer 105, a first filter layer 140, asecond transparent insulating layer 105, the second light-sensing layer120, a third transparent insulating layer 105, a second filter layer150, a fourth transparent insulating layer 105, the third light-sensinglayer 130, and a fifth transparent insulating layer 105 sequentiallystacked on the substrate 101. That is, the first through fifthtransparent insulating layers 105 may be disposed between and on thefirst through third light-sensing layers 110, 120, and 130, and thefirst and second filter layers 140 and 150 are respectively disposedbetween the first transparent insulating layer 105 and the secondtransparent insulating layer 105 and between the third transparentinsulating layer 105 and the fourth transparent insulating layer 105.Each of the first through fifth transparent insulating layers 105 may beformed of a transparent insulating material such as SiO₂.

However, the first through fifth transparent insulating layers 105disposed between and on the first through third light-sensing layers110, 120, and 130 may be omitted if the first and second filter layers140 and 150 have sufficient insulating characteristics.

FIG. 2 is a cross-sectional view of a stack-type image sensor 100′,wherein the first through fourth transparent insulating layers 105 ofFIG. 1 are omitted, according to example embodiments. Referring to FIG.2, the image sensor 100′ may include the first light-sensing layer 110,the first filter layer 140, the second light-sensing layer 120, thesecond filter layer 150, the third light-sensing layer 130, and thetransparent insulating layer 105 sequentially stacked on the substrate101. The transparent insulating layer 105, which is an uppermost layer,may protect the third light-sensing layer 130.

In order to enable the first through third light-sensing layers 110,120, and 130 to detect light having different wavelengths, each of thefirst and second filter layers 140 and 150 may block light having aspecific/desired wavelength. For example, the second filter layer 150may block light having a blue wavelength and transmit light havingwavelengths other than blue wavelength. The first filter layer 140 mayblock light having a green wavelength and transmit light havingwavelengths other than green wavelength. Alternatively, the first filterlayer 140 may transmit light having a red wavelength and block lighthaving wavelengths other than red wavelength. Each of the first andsecond filter layers 140 and 150 may include a light absorptionadjusting layer and/or a complementary color filter.

The light absorption adjusting layer includes a light absorptionmaterial having an absorption coefficient that varies according to awavelength of light incident thereon and thickness of the layer. Forexample, amorphous silicon (a-Si) has an absorption coefficient forlight having a blue wavelength that is about 1000 times greater thanthat for light having a red wavelength. Accordingly, if amorphoussilicon having an appropriate thickness is selected, it is possible toselectively block light having a specific/desired wavelength. That is,if amorphous silicon is formed relatively thin, only light having a bluewavelength may be blocked and light having green and red wavelengths maybe transmitted. If amorphous silicon is formed relatively thick, lighthaving blue and green wavelengths may be blocked and light having a redwavelength may be transmitted. The light absorption material used toform the light absorption adjusting layer is not limited to amorphoussilicon and may be any of crystalline silicon, Ge, GaAs, andGa_(x)In_(y)S₂P.

A complementary color filter refers to a filter that blocks light havinga specific/desired wavelength and transmits light having wavelengthsother than the specific/desired wavelength. For example, a bluecomplementary color filter blocks light having a blue wavelength andtransmits light having wavelengths other than the blue wavelength. Sincewavelength-based light transmitting/blocking characteristics of acomplementary color filter are not affected by thickness, if acomplementary color filter is used, the first and second filter layers140 and 150 may have the same thickness. The complementary color filtermay include an organic filter and/or inorganic filter. The inorganicfilter may include, for example, TiO_(x), SiO_(x), Fe₂O₃, cobalt(Co)-doped ZnO_(x), and/or Co-doped Al₂O₃.

As described above, the first filter layer 140 may be a red color filterthat only transmits light having a red wavelength.

In FIGS. 1 and 2, light incident on the image sensor 100 or 100′ may bedetected by the first through third light-sensing layers 110, 120, and130 based on color components. Accordingly, the first through thirdlight-sensing layers 110, 120, and 130 may act as unit cells fordetecting different color light. For example, the third light-sensinglayer 130, which is an uppermost layer among the first through thirdlight-sensing layers 110, 120, and 130, may detect red, green, and, bluelight. Part of the light incident on the image sensor 100 or 100′travels toward the second light-sensing layer 120. The second filterlayer 150 may block light having a blue wavelength and transmit lighthaving wavelengths other than the blue wavelength. Accordingly, thesecond light-sensing layer 120 may detect mostly red and green light.Part of the light passing through the second light-sensing layer 120travels toward the first light-sensing layer 110. The first filter layer140 may block light having a green wavelength and transmit light havingwavelengths other than green wavelength. Alternatively, the first filterlayer 140 may transmit only light having a red wavelength and blocklight having wavelengths other than red wavelength. Accordingly, thefirst light-sensing layer 110 may detect mostly red light. Accordingly,intensities of red, green, and blue light may be exactly calculated byconsidering intensities of the light detected by the first through thirdlight-sensing layers 110, 120, and 130 and a light loss after the lighttravels through the first through third light-sensing layers 110, 120,and 130.

Since each of the image sensors 100 and 100′ has a structure in whichthe plurality of light-sensing layers 110, 120, and 130 are stacked, thesize of a unit cell for detecting each color light may not be reduced toa size less than 1 μm, thereby avoiding resolution saturation. Aconventional charge-coupled device (CCD) or complementary metal oxidesemiconductor (CMOS) image sensor includes a plurality of light sensorcells arranged on one layer, wherein four photodiode cells arranged in asquare shape form one pixel. For example, in one pixel, two photodiodecells in a diagonal direction include green cells, and two photodiodecells in another diagonal direction respectively include a red cell anda blue cell. That is, in the conventional CCD or CMOS image sensor, thesize of a unit cell is ¼ or less of the size of a pixel. Accordingly,there is a limitation in increasing the degree of integration withoutresolution saturation. However, since the image sensors 100 and 100′illustrated in FIGS. 1 and 2 are constructed so that the size of a unitcell is equal to the size of a pixel, the degree of integration may beincreased without resolution saturation.

In order for the first through third light-sensing layers 110, 120, and130 to operate, light sensors in the first through third light-sensinglayers 110, 120, and 130 may have electrical characteristics that varyaccording to an amount of incident light and transmitted light. Thelight sensors having such electrical characteristics may be obtainedfrom a conventional semiconductor material. However, if conventionalsemiconductor materials having a PN junction structure are stacked,defects or poor PN junction may occur during a manufacturing process.Due to the defects or poor PN junction, the amount of dark current maybe increased and image blur may occur. Wafer bonding may be used tocorrect the defects or poor PN junction. However, in this case,throughput may be reduced due to misalignment caused during the waferbonding.

Accordingly, the image sensors 100 and 100′ of FIGS. 1 and 2 useresistance change elements having an electrical resistance that changesaccording to the amount of incident light as the light sensors in thefirst through third light-sensing layers 110, 120, and 130. For example,carbon nanotubes (CNTs) on which spironaphthoxazine (SPO) is adsorbedmay be used as the light sensors of the first through thirdlight-sensing layers 110, 120, and 130. In this case, when the SPO isexposed to light, electrons change from a lowest unoccupied molecularorbital (LUMO) to a highest occupied molecular orbital (HOMO), and thusthe resistance state of the CNTs changed from a high resistance state toa low resistance state. Accordingly, the intensity of incident light maybe measured by using a change in the resistance of the CNTs on which theSPO is adsorbed.

FIG. 3 is a circuit diagram illustrating one of the first through thirdlight-sensing layers 110, 120, and 130 in the stack-type image sensor100 or 100′ of FIG. 1 or 2, according to example embodiments. Referringto FIG. 3, a resistance change element 111 and a capacitor 112 areconnected to each other in parallel. In order to output a change in theresistance of the resistance change element 111, a driving circuitincluding three transistors is connected to the resistance changeelement 111 and the capacitor 112. In detail, a source of a reset (RS)transistor 113 and a gate of a source follower transistor 114 areconnected to one end of the resistance change element 111 and thecapacitor 112. A driving voltage is applied to drains of the RStransistor 113 and the source follower transistor 114. A source of thesource follower transistor 114 and a drain of a select (SEL) transistor115 are connected to each other, and a source of the SEL transistor 115is connected to an output line 116. Other ends of the resistance changeelement 111 and the capacitor 112 are grounded.

In this configuration, the SEL transistor 115 is turned on by applying agate voltage to a gate of the SEL transistor 115. Next, the RStransistor 113 is turned on by applying a gate voltage to a gate of theRS transistor 113. Accordingly, a driving voltage is applied to thecapacitor 112 to charge the capacitor 112. Accordingly, the resistancechange element 111 and the capacitor 112 are reset to a referencevoltage. Since the reference voltage is applied to the gate of thesource follower transistor 114, current is supplied from the drain ofthe source follower transistor 114 through the SEL transistor 115 to theoutput line 116. In this state, if light is incident on the lightsensing layer including the resistance change element 111, theresistance change element 111 is changed to a low resistance state.Accordingly, electric charges stored in the capacitor 112 aredischarged, and thus a voltage applied to the gate of the sourcefollower transistor 114 is lowered. As a result, the amount of currentflowing from the source follower transistor 114 through the SELtransistor 115 to the output line 116 is reduced. The amount of thelight incident on the resistance change element 111 may be obtained froma change in the amount of current.

Although the driving circuit illustrated in FIG. 3 includes threetransistors, the RS transistor 113, the source follower transistor 114,and the SEL transistor 115, example embodiments are not limited thereto.The driving circuit may be configured in a variety of different waysaccording to design requirements. For example, the driving circuit mayinclude only one transistor. However, in order to reduce noise andobtain more accurate data, the driving circuit may include four or moretransistors.

FIG. 4 is a circuit diagram illustrating one of the first through thirdlight-sensing layers 110, 120, and 130 including a driving circuitincluding four transistors, in the stack-type image sensor 100 or 100′of FIG. 1 or 2, according to example embodiments. The driving circuit ofFIG. 4 is different from the driving circuit of FIG. 3 in that a set(SET) transistor 117 is further disposed between one end of theresistance change element 111 and the capacitor 112 and the source ofthe RS transistor 113 and the gate of the source follower transistor114. Although not shown, an amplifier shared by a plurality of pixelsmay be further added to the driving circuit.

The driving circuit illustrated in FIGS. 3 and/or 4 may be included ineach of the first through third light-sensing layers 110, 120, and 130illustrated in FIG. 1. For example, the first light-sensing layer 110may include the resistance change element 111, the capacitor 112, the RStransistor 113, the source follower transistor 114, the SEL transistor115, and/or the output line 116 illustrated in FIG. 3. Likewise, each ofthe second light-sensing layer 120 and the third light-sensing layer 130may include the resistance change element 111, the capacitor 112, the RStransistor 113, the source follower transistor 114, the SEL transistor115, and/or the output line 116. Accordingly, the color and intensity ofincident light may be calculated by using outputs obtained from theoutput lines 116 of the first through third light-sensing layers 110,120, and 130.

In order to obtain a two-dimensional (2D) image, the image sensor 100,100′ of FIG. 1 or 2 may be arranged in a form of a plurality of pixels Pof a two dimensional array, as shown in FIG. 5. FIG. 5 illustratespixels P including at least a portion of the stack-type image sensor 100or 100′ as shown in the example embodiments of FIG. 1 or 2. Each of theplurality of pixels P may have a cross-sectional view as shown in theexample embodiments of FIG. 1 or 2. The driving circuit illustrated inthe example embodiments of FIG. 3 or 4 is included in each of the firstthrough third light-sensing layers 110, 120, and 130 in each of theplurality of pixels P. Referring to FIG. 5, at least a portion eachpixel P (in instances, a majority portion of each pixel P) is occupiedby the resistance change element 111, marked by hatched region enclosedby the dashed line. A remaining portion 118 of the pixel P not occupiedby the resistance change element 111 may be occupied by either one orall of the capacitor 112, the RS transistor 113, the source followertransistor 114, the SEL transistor 115, the output line 116 and SETtransistor 117. Accordingly, an area of a region that detects light ineach pixel, referred to as an aspect ratio, may be sufficiently large,sensitivity may therefore be improved.

The image sensors according to example embodiments may be used in, forexample, a light-sensitive touch panel, a digital camera, a camcorder, amobile phone, a portable electronic device or the like.

Example embodiments having thus been described, it will be obvious thatthe same may be varied in many ways. Such variations are not to beregarded as a departure from the intended spirit and scope of exampleembodiments, and all such modifications as would be obvious to oneskilled in the art are intended to be included within the scope of thefollowing claims.

What is claimed is:
 1. An image sensor comprising: at least twolight-sensing layers stacked on different layers, each of the at leasttwo light-sensing layers including at least one resistance changeelement, an electrical resistance of the at least one resistance changeelement changing according to an amount of incident light; and at leastone filter layer, the at least one filter layer including a lightabsorption adjusting layer, wherein the at least two light-sensinglayers and the at least one filter layer are alternately disposed in avertical direction, and the light absorption adjusting layer includes alight absorption material having an absorption coefficient that variesaccording to a wavelength of light incident on the light absorptionadjusting layer and a thickness of the light absorption adjusting layer.2. The image sensor of claim 1, wherein the resistance change element iscarbon nanotubes on which spironaphthoxazine (SPO) is adsorbed.
 3. Theimage sensor of claim 1, further comprising: a substrate; wherein the atleast one filter layer includes a first filter layer and a second filterlayer, the at least two light-sensing layers include a firstlight-sensing layer, a second light-sensing layer and a thirdlight-sensing layer, and the first light-sensing layer, the first filterlayer, the second light-sensing layer, the second filter layer, and thethird light-sensing layer are sequentially stacked on the substrate. 4.The image sensor of claim 3, wherein the first filter layer blocks lighthaving a blue wavelength and transmits light having wavelengths otherthan the blue wavelength, and the second filter layer blocks lighthaving a green wavelength and transmits light having wavelengths otherthan the green wavelength or transmits light having a red wavelength andblocks light having wavelengths other than the red wavelength.
 5. Theimage sensor of claim 4, wherein the light absorption adjusting layer ofthe first filter layer is thinner than the light absorption adjustinglayer of the second filter layer.
 6. The image sensor of claim 4,wherein the first filter layer is a blue complementary color filter thatblocks light having a blue wavelength and transmits light having otherwavelengths, and the second filter layer is a green color complementarycolor filter that blocks light having a green wavelength and transmitslight having other wavelengths or a red color filter that transmitslight having a red wavelength.
 7. A two-dimensional pixel arraycomprising: a plurality of pixels, at least one pixel of the pluralityof pixels including the image sensor of claim
 1. 8. An image sensorcomprising: at least two light-sensing layers stacked on differentlayers, each of the at least two light-sensing layers including at leastone resistance change element, an electrical resistance of the at leastone resistance change element changing according to an amount ofincident light; a substrate; a first filter layer; a second filterlayer, each of the first and second filter layers including a lightabsorption adjusting layer, wherein the light absorption adjusting layerincludes a light absorption material having an absorption coefficientthat varies according to a wavelength of light incident on the lightabsorption adjusting layer and a thickness of the light absorptionadjusting layer, the at least two light-sensing layers include a firstlight-sensing layer, a second light-sensing layer and a thirdlight-sensing layer, and the first light-sensing layer, the first filterlayer, the second light-sensing layer, the second filter layer, and thethird light-sensing layer are sequentially stacked on the substrate; andat least one transparent insulating layer between the firstlight-sensing layer and the second light-sensing layer and between thesecond light-sensing layer and the third light-sensing layer.
 9. Atwo-dimensional pixel array comprising: a plurality of pixels, at leastone pixel of the plurality of pixels including the image sensor of claim8.
 10. An image sensor comprising: at least two light-sensing layersstacked on different layers, each of the at least two light-sensinglayers including at least one resistance change element, an electricalresistance of the at least one resistance change element changingaccording to an amount of incident light; at least one filter layer, theat least one filter layer including a light absorption adjusting layer,the at least two light-sensing layers and the at least one filter layerbeing alternately disposed in a vertical direction; and a substrate,wherein, the at least one filter layer includes a first filter layer anda second filter layer, the at least two light-sensing layers include afirst light-sensing layer, a second light-sensing layer and a thirdlight-sensing layer, the first light-sensing layer, the first filterlayer, the second light-sensing layer, the second filter layer, and thethird light-sensing layer are sequentially stacked on the substrate, andeach of the first through third light-sensing layers includes, theresistance change element and a capacitor connected to each other inparallel, a reset transistor having a source connected to one end of theresistance change element and the capacitor, a source followertransistor having a gate connected to the one end of the resistancechange element and the capacitor and a drain connected to a drain of thereset transistor, a select transistor having a drain connected to asource of the source follower transistor, and an output line connectedto a source of the select transistor.
 11. The image sensor of claim 10,wherein each of the first through third light-sensing layers furthercomprises: a set transistor between the one end of the resistance changeelement and the capacitor, and the source of the reset transistor andthe gate of the source follower transistor.
 12. An image sensorcomprising: at least two light-sensing layers stacked on differentlayers, each of the at least two light-sensing layers including at leastone resistance change element, a current flowing in each of the twolight-sensing layers being changed according to an amount of incidentlight; and at least one filter layer, the at least one filter layerincluding a light absorption adjusting layer, wherein the at least twolight-sensing layers and the at least one filter layer are alternatelydisposed in a vertical direction, and the light absorption adjustinglayer including a light absorption material having an absorptioncoefficient that varies according to a wavelength of light incident onthe light absorption adjusting layer and a thickness of the lightabsorption adjusting layer.